The 1N4757A-G is a unidirectional silicon zener diode with a maximum power dissipation of 1W and an operating temperature range of -65°C to 200°C. It features an axial terminal position and a DO-41 package. The diode element is made of silicon and has a zener diode type.
PolarityUNIDIRECTIONAL
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Technical Specifications
Panjit 1N4757A-G technical specifications.
General
| Max Operating Temperature | 200 |
| Number of Terminals | 2 |
| Min Operating Temperature | -65 |
| Terminal Position | AXIAL |
| JEDEC Package Code | DO-41 |
| Pin Count | 2 |
| Number of Elements | 1 |
| Polarity | UNIDIRECTIONAL |
| Diode Element Material | SILICON |
| Diode Type | ZENER DIODE |
| Power Dissipation-Max | 1 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| Lead Free | Yes |
| HTS Code | 8541.10.00.50 |
| REACH | Compliant |
| Military Spec | False |
Datasheet
Panjit 1N4757A-G Datasheet
Download the complete datasheet for Panjit 1N4757A-G to view detailed technical specifications.
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