The B108S_R2_00001 is a silicon bridge rectifier diode with a maximum operating temperature of 150 degrees Celsius and a minimum operating temperature of -55 degrees Celsius. It features a dual terminal position and four diode elements. The device has a maximum reverse voltage of 800 volts and a breakdown voltage of 800 volts. It is a discrete semiconductor component suitable for use in a variety of applications.
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Technical Specifications
Panjit B108S_R2_00001 technical specifications.
General
| Max Operating Temperature | 150 |
| Number of Terminals | 4 |
| Min Operating Temperature | -55 |
| Terminal Position | DUAL |
| Number of Elements | 4 |
| Diode Element Material | SILICON |
| Diode Type | BRIDGE RECTIFIER DIODE |
| Rep Pk Reverse Voltage-Max | 800 |
| Breakdown Voltage-Min | 800 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| REACH | Compliant |
| Military Spec | False |
Datasheet
Panjit B108S_R2_00001 Datasheet
Download the complete datasheet for Panjit B108S_R2_00001 to view detailed technical specifications.
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