The 2SB754-O(BS) is a single PNP transistor with a maximum collector-base voltage of 50V and a maximum collector-emitter voltage of 50V. It can handle a maximum DC collector current of 7A and a maximum power dissipation of 2500mW. The transistor is mounted through a hole and has a package type of 2-16B1A. It operates within a temperature range of -55°C to 150°C.
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Toshiba 2SB754-O(BS) technical specifications.
| Package Family Name | 2-16B1A |
| Package/Case | 2-16B1A |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 15.9(Max) |
| Package Width (mm) | 4.8(Max) |
| Package Height (mm) | 19 |
| Seated Plane Height (mm) | 23.6(Max) |
| Mounting | Through Hole |
| Type | PNP |
| Configuration | Single |
| Number of Elements per Chip | 1 |
| Maximum Collector Base Voltage | 50V |
| Maximum Emitter Base Voltage | 5V |
| Maximum Collector-Emitter Voltage | 50V |
| Maximum DC Collector Current | 7A |
| Maximum Power Dissipation | 2500mW |
| Material | Si |
| Minimum DC Current Gain | 120@1A@1V |
| Maximum Transition Frequency | 10(Typ)MHz |
| Category | Bipolar Power |
| Max Operating Temperature | 150°C |
| Cage Code | S0562 |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
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