This is a 100 V single N-channel power MOSFET in a TO-247-L package. It uses shielded-gate trench technology and is specified for 2.9 mΩ maximum drain-source on-resistance at 10 V gate drive. The device is rated for 295 A continuous drain current at 25 °C case temperature, 640 A pulsed drain current, and 468 W power dissipation. It operates with a gate-source voltage range of ±20 V and is intended for high-efficiency fast-switching applications such as charger adapters, power tools, and LED lighting.
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PFC Device PRM2R9N10PT-L technical specifications.
| Channel Type | N-Channel |
| Drain-Source Voltage | 100V |
| Gate-Source Voltage | ±20V |
| Continuous Drain Current (Tc=25°C) | 295A |
| Continuous Drain Current (Tc=100°C) | 170A |
| Pulsed Drain Current | 640A |
| Power Dissipation | 468W |
| Drain-Source On-Resistance Max | 2.9mΩ |
| Drain-Source On-Resistance Typ | 2.4mΩ |
| Gate Threshold Voltage | 2.0 to 4.0V |
| Total Gate Charge | 114nC |
| Gate-Drain Charge | 25nC |
| Input Capacitance | 7333pF |
| Output Capacitance | 1124pF |
| Reverse Transfer Capacitance | 46pF |
| Thermal Resistance Junction-to-Case | 0.44°C/W |
| Operating Junction Temperature | -55 to 175°C |
| Technology | SGT |
Download the complete datasheet for PFC Device PRM2R9N10PT-L to view detailed technical specifications.
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