This 100 V N-channel power MOSFET is built with trench DMOS technology in a TO-263 package. It supports 185 A continuous drain current at TC=25 °C, 275 W power dissipation at TC=25 °C, and a -55 °C to +150 °C operating junction range. Static drain-source on-resistance is specified to 4.2 mΩ maximum at VGS=10 V and 6.0 mΩ maximum at VGS=4.5 V. The device is intended for fast-switching power conversion applications such as chargers, adapters, power tools, and LED lighting.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the PFC Device PRM4R2N10CTB datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
PFC Device PRM4R2N10CTB technical specifications.
| Drain-Source Voltage | 100V |
| Continuous Drain Current | 185A |
| Continuous Drain Current at 100C | 117A |
| Pulsed Drain Current | 440A |
| Power Dissipation | 275W |
| Operating Junction Temperature | -55 to +150°C |
| Static Drain-Source On-Resistance at 10V | 4.2 maxmΩ |
| Static Drain-Source On-Resistance at 4.5V | 6.0 maxmΩ |
| Gate-Source Voltage | +20 / -12V |
| Drain-Source Breakdown Voltage | 100 minV |
| Gate Threshold Voltage | 1.2 to 2.5V |
| Total Gate Charge | 110 typnC |
| Input Capacitance | 6680 typpF |
| Output Capacitance | 1690 typpF |
| Reverse Transfer Capacitance | 200 typpF |
| Thermal Resistance Junction-to-Case | 0.45 max°C/W |
| Thermal Resistance Junction-to-Ambient | 62 max°C/W |
Download the complete datasheet for PFC Device PRM4R2N10CTB to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
