This device is a 60 V N-channel enhancement-mode power MOSFET built with trench DMOS technology. It is rated for up to 97 A continuous drain current at 25°C case temperature and has a maximum drain-source on-resistance of 5.0 mΩ at 10 V gate drive and 7.2 mΩ at 4.5 V. The MOSFET is offered in a TO-252 (D-PAK) package and operates over a junction temperature range of -55°C to 150°C. It is intended for fast-switching power applications such as chargers, adapters, power tools, and LED lighting.
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PFC Device PRM5R0N06D technical specifications.
| Technology | SGT |
| Channel Type | N-Channel |
| Drain-Source Voltage | 60V |
| Gate-Source Voltage | ±20V |
| Continuous Drain Current | 97A |
| Power Dissipation | 78W |
| Drain-Source On-Resistance @ VGS=10V | 5.0 maxmΩ |
| Drain-Source On-Resistance @ VGS=4.5V | 7.2 maxmΩ |
| Total Gate Charge | 49.5 typnC |
| Gate-Drain Charge | 8.4 typnC |
| Input Capacitance | 2797 typpF |
| Output Capacitance | 1057 typpF |
| Reverse Transfer Capacitance | 47 typpF |
| Gate Threshold Voltage | 2.5 maxV |
| Operating Junction Temperature | -55 to 150°C |
| Thermal Resistance Junction-to-Case | 1.6 max°C/W |
| Single Pulse Avalanche Energy | 48mJ |
| Reverse Recovery Time | 35 typns |
Download the complete datasheet for PFC Device PRM5R0N06D to view detailed technical specifications.
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