Silicon planar epitaxial PNP transistor in a plastic TO-92 package intended primarily for high-speed saturated switching applications in industrial service. The device is rated for up to 40 V collector-base voltage, 40 V collector-emitter voltage, and 200 mA DC collector current, with total power dissipation of 350 mW at 25 °C ambient. Philips specifies a maximum junction temperature of 150 °C and a storage temperature range of -65 °C to +150 °C. Typical transition frequency is 250 MHz at 10 mA and 20 V, and storage time is specified below 225 ns under the stated test conditions.
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| Max Operating Temperature | 150 |
| RoHS | Yes |
| REACH | unknown |
| Military Spec | False |
Download the complete datasheet for Philips 2N3906 to view detailed technical specifications.
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