The CM100DY-28H is a high-power insulated gate bipolar transistor (IGBT) with a collector-emitter breakdown voltage of 1.4kV and a maximum collector current of 100A. It is designed for use in high-power applications and has a maximum power dissipation of 780W. The device is packaged in a flange mount module and is suitable for operation over a temperature range of -40°C to 150°C. The CM100DY-28H is not RoHS compliant.
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| Package/Case | Module |
| Collector Emitter Breakdown Voltage | 1.4kV |
| Collector-emitter Voltage-Max | 4.2V |
| Input | Standard |
| Input Capacitance | 20nF |
| Max Collector Current | 100A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 780W |
| Mount | Chassis Mount |
| NTC Thermistor | No |
| Packaging | Bulk |
| RoHS Compliant | No |
| Series | IGBTMOD™ |
| RoHS | Not Compliant |
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