The CM50DU-24H is a high-power insulated gate bipolar transistor (IGBT) with a collector-emitter breakdown voltage of 1.2kV and a maximum collector current of 50A. It is designed for use in high-power applications and has a maximum power dissipation of 400W. The device is packaged in a module format and is suitable for chassis mount applications. The CM50DU-24H operates over a temperature range of -40°C to 150°C and is not RoHS compliant.
PackageModule
MountingChassis Mount
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Technical Specifications
Powerex CM50DU-24H technical specifications.
General
| Package/Case | Module |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Collector-emitter Voltage-Max | 3.7V |
| Input | Standard |
| Input Capacitance | 7.5nF |
| Max Collector Current | 50A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 400W |
| Mount | Chassis Mount |
| NTC Thermistor | No |
| Packaging | Bulk |
| RoHS Compliant | No |
| Series | IGBTMOD™ |
Compliance
| RoHS | Not Compliant |
Datasheet
Powerex CM50DU-24H Datasheet
Download the complete datasheet for Powerex CM50DU-24H to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.