The CM900DU-24NF is a high-power insulated gate bipolar transistor with a collector-emitter breakdown voltage of 1.2kV and a maximum collector current of 900A. It has a maximum power dissipation of 2.55kW and operates over a temperature range of -40°C to 150°C. The device is packaged in a flange mount module and is not RoHS compliant. It is suitable for use in high-power applications requiring a high current and voltage rating.
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| Package/Case | Module |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Collector-emitter Voltage-Max | 2.5V |
| Current Rating | 900A |
| Input | Standard |
| Input Capacitance | 140nF |
| Max Collector Current | 900A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 2.55kW |
| Mount | Chassis Mount |
| NTC Thermistor | No |
| Packaging | Bulk |
| RoHS Compliant | No |
| Series | IGBTMOD™ |
| DC Rated Voltage | 1.2kV |
| RoHS | Not Compliant |
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