This 16Mx16 Mobile SDRAM features a density of 256M and a maximum clock rate of 100MHz. It has 4 internal banks with 4M words per bank and a maximum access time of 22ns. The device operates at a typical supply voltage of 2.5V and can withstand a maximum supply voltage of 2.9V and a minimum supply voltage of 2.3V. It is designed for surface mount applications in a plastic ball grid array package and can operate within a temperature range of 0°C to 70°C.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Promos Technologies V55C2256164VBLB10PC datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
| Basic Package Type | Ball Grid Array |
| Package Family Name | BGA |
| Package/Case | BGA |
| Package Description | Plastic Ball Grid Array |
| Lead Shape | Ball |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Density | 256Mbit |
| Type | Mobile SDRAM |
| Organization | 16Mx16 |
| Data Bus Width | 16bit |
| Maximum Clock Rate | 100MHz |
| Number of Internal Banks | 4 |
| Number of Words per Bank | 4M |
| Maximum Access Time | 22|8|7ns |
| Density in Bits | 268435456bit |
| Address Bus Width | 15bit |
| Maximum Operating Current | 70mA |
| Typical Operating Supply Voltage | 2.5V |
| Max Operating Supply Voltage | 2.9V |
| Min Operating Supply Voltage | 2.3V |
| Min Operating Temperature | 0°C |
| Max Operating Temperature | 70°C |
| EU RoHS | No |
| HTS Code | 8542320024 |
| Schedule B | 8542320015 |
| ECCN | EAR99 |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Download the complete datasheet for Promos Technologies V55C2256164VBLB10PC to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
