The V55C2256164VBLN10E is a 256Mbit mobile SDRAM from Promos Technologies. It features a 16Mx16 organization and 4 internal banks with 4M words per bank. The device operates at a maximum clock rate of 100MHz and has a maximum access time of 22ns, 8ns, and 7ns. It is designed to operate within a temperature range of -40°C to 125°C and consumes a maximum operating current of 70mA. The device is supplied with a typical operating voltage of 2.5V, a maximum operating voltage of 2.9V, and a minimum operating voltage of 2.3V.
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| Package Family Name | Die |
| Package/Case | Die |
| Package Description | An Unpackaged, Fully Tested Integrated Circuit Chip |
| Density | 256Mbit |
| Type | Mobile SDRAM |
| Organization | 16Mx16 |
| Data Bus Width | 16bit |
| Maximum Clock Rate | 100MHz |
| Number of Internal Banks | 4 |
| Number of Words per Bank | 4M |
| Maximum Access Time | 22|8|7ns |
| Density in Bits | 268435456bit |
| Address Bus Width | 15bit |
| Maximum Operating Current | 70mA |
| Typical Operating Supply Voltage | 2.5V |
| Max Operating Supply Voltage | 2.9V |
| Min Operating Supply Voltage | 2.3V |
| Min Operating Temperature | -40°C |
| Max Operating Temperature | 125°C |
| EU RoHS | Yes |
| HTS Code | 8542320024 |
| Schedule B | 8542320015 |
| ECCN | EAR99 |
| Radiation Hardening | No |
| RoHS Versions | 2002/95/EC |
