256Mbit Mobile SDRAM chip, organized as 16Mx16, features a 16-bit data bus and a 15-bit address bus. Operating at a maximum clock rate of 100 MHz, this DRAM component offers 4 internal banks with 4M words per bank. It is housed in a 54-pin Fine Pitch Ball Grid Array (FBGA) package for surface mounting, with dimensions of 13mm x 8mm x 0.8mm (Max). The chip operates with a typical supply voltage of 2.5V, supporting a range from 2.3V to 2.9V, and has a maximum operating current of 70mA.
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Promos Technologies V55C2256164VBUC10 technical specifications.
| Basic Package Type | Ball Grid Array |
| Package Family Name | BGA |
| Package/Case | FBGA |
| Package Description | Fine Pitch Ball Grid Array |
| Lead Shape | Ball |
| Pin Count | 54 |
| PCB | 54 |
| Package Length (mm) | 13 |
| Package Width (mm) | 8 |
| Package Height (mm) | 0.8(Max) |
| Seated Plane Height (mm) | 1.2(Max) |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Density | 256Mbit |
| Type | Mobile SDRAM |
| Organization | 16Mx16 |
| Data Bus Width | 16bit |
| Maximum Clock Rate | 100MHz |
| Number of Internal Banks | 4 |
| Number of Words per Bank | 4M |
| Maximum Access Time | 22|8|7ns |
| Density in Bits | 268435456bit |
| Address Bus Width | 15bit |
| Maximum Operating Current | 70mA |
| Typical Operating Supply Voltage | 2.5V |
| Max Operating Supply Voltage | 2.9V |
| Min Operating Supply Voltage | 2.3V |
| Min Operating Temperature | 0°C |
| Max Operating Temperature | 70°C |
| EU RoHS | No |
| HTS Code | 8542320024 |
| Schedule B | 8542320015 |
| ECCN | EAR99 |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
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