This 256Mbit mobile SDRAM features a 16Mx16 organization and 4 banks with 4M words per bank. It operates at a maximum clock rate of 100MHz and has a maximum access time of 22ns, 8ns, and 7ns. The device is packaged in a plastic ball grid array and is designed for surface mount applications. It operates within a temperature range of -40°C to 125°C and has a typical operating supply voltage of 2.5V, a maximum operating supply voltage of 2.9V, and a minimum operating supply voltage of 2.3V.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Promos Technologies V55C2256164VBUH10E datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
| Basic Package Type | Ball Grid Array |
| Package Family Name | BGA |
| Package/Case | BGA |
| Package Description | Plastic Ball Grid Array |
| Lead Shape | Ball |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Density | 256Mbit |
| Type | Mobile SDRAM |
| Organization | 16Mx16 |
| Data Bus Width | 16bit |
| Maximum Clock Rate | 100MHz |
| Number of Internal Banks | 4 |
| Number of Words per Bank | 4M |
| Maximum Access Time | 22|8|7ns |
| Density in Bits | 268435456bit |
| Address Bus Width | 15bit |
| Maximum Operating Current | 70mA |
| Typical Operating Supply Voltage | 2.5V |
| Max Operating Supply Voltage | 2.9V |
| Min Operating Supply Voltage | 2.3V |
| Min Operating Temperature | -40°C |
| Max Operating Temperature | 125°C |
| EU RoHS | Yes |
| HTS Code | 8542320024 |
| Schedule B | 8542320015 |
| ECCN | EAR99 |
| Radiation Hardening | No |
| RoHS Versions | 2002/95/EC |
Download the complete datasheet for Promos Technologies V55C2256164VBUH10E to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
