High-reliability silicon rectifier diode, featuring a maximum forward voltage of 1V and a maximum output current of 200mA. This component offers a maximum power dissipation of 400mW and a maximum reverse voltage of 200V. With a reverse recovery time of 0.1µs, it is housed in a glass, round, long-form package with axial wire terminals. The isolated case connection and maximum operating temperature of 175°C ensure robust performance.
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Renesas 1SS81 technical specifications.
| Additional Feature | HIGH RELIABILITY |
| Case Connection | Isolated |
| Diode Element Material | SILICON |
| Diode Type | RECTIFIER |
| Forward Voltage-Max (VF) | 1V |
| JEDEC-95 Code | DO-35 |
| JESD-30 Code | O-LALF-W2 |
| JESD-609 Code | e0 |
| Max Operating Temperature | 175°C |
| Max Output Current | 200mA |
| Max Power Dissipation | 400mW |
| Number of Elements | 1 |
| Number of Phases | 1 |
| Package Body Material | Glass |
| Package Shape | Round |
| Package Style | LONG FORMMeter |
| Qualification Status | Not Qualified |
| Rep Pk Reverse Voltage-Max | 200V |
| Reverse Recovery Time-Max | 0.1us |
| RoHS Compliant | No |
| Surface Mount | No |
| Terminal Finish | Tin |
| Terminal Form | Wire |
| Terminal Position | AXIAL |
| RoHS | Not Compliant |
No datasheet is available for this part.
