The 2SD1950-T2-AZ is a surface mount NPN bipolar junction transistor with a maximum collector-base voltage of 30V, maximum emitter-base voltage of 15V, and maximum collector-emitter voltage of 25V. It has a maximum DC collector current of 2A and a maximum power dissipation of 2000mW. The transistor is made of silicon material and has a minimum DC current gain of 400 at 2A and 5V. It operates within a temperature range of -55°C to 150°C.
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| Package Family Name | Mini-Mold |
| Package/Case | Power Mini-Mold |
| Pin Count | 4 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 4.5 |
| Package Width (mm) | 2.5 |
| Package Height (mm) | 1.5 |
| Mounting | Surface Mount |
| Type | NPN |
| Configuration | Single Dual Collector |
| Number of Elements per Chip | 1 |
| Maximum Collector Base Voltage | 30V |
| Maximum Emitter Base Voltage | 15V |
| Maximum Collector-Emitter Voltage | 25V |
| Maximum DC Collector Current | 2A |
| Maximum Power Dissipation | 2000mW |
| Material | Si |
| Minimum DC Current Gain | 400@2A@5V |
| Maximum Transition Frequency | 350(Typ)MHz |
| Category | Bipolar Power |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| Cage Code | SAN34 |
| EU RoHS | Yes with Exemption |
| HTS Code | 8541290075 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | Yes |
| RoHS Versions | 2011/65/EU, 2015/863 |
