P-channel silicon power MOSFET featuring a 400V maximum drain-source voltage and 2A continuous drain current. This through-hole component, housed in a TO-220AB package, offers a typical input capacitance of 520pF at 10V and a maximum power dissipation of 40W. Designed for single element configuration, it operates within a temperature range of -55°C to 150°C.
PackageTO-220AB
MountingThrough Hole
Quick Jump:
Technical Specifications
Renesas 2SJ117 technical specifications.
General
| Basic Package Type | Through Hole |
| Package Family Name | TO-220 |
| Package/Case | TO-220AB |
| Package Description | Transistor Outline Package |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 10.16 |
| Package Width (mm) | 4.44 |
| Package Height (mm) | 8.6 |
| Seated Plane Height (mm) | 21.29 |
| Pin Pitch (mm) | 2.54 |
| Package Material | Plastic |
| Mounting | Through Hole |
| Jedec | TO-220AB |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | P |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 400V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 2A |
| Material | Si |
| Maximum Drain Source Resistance | 7000@15VmOhm |
| Typical Input Capacitance @ Vds | 520@10VpF |
| Maximum Power Dissipation | 40000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | SAN34 |
| EU RoHS | No |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Renesas 2SJ117 Datasheet
Download the complete datasheet for Renesas 2SJ117 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.