P-channel single power MOSFET featuring METAL-OXIDE SEMICONDUCTOR FET technology. Maximum drain current (ID) is 20A with a minimum DS breakdown voltage of 20V. Offers a maximum drain-source on-resistance of 20mΩ. Designed for switching applications, this component is housed in a TO-252AA (R-PSSO-G2) small outline surface mount package with gull wing terminals. Maximum power dissipation is 36W, and it operates up to 150°C. RoHS and REACH SVHC compliant with tin terminal finish.
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Technical Specifications
Renesas 2SJ687-ZK-E1-AY technical specifications.
General
Case Connection
DRAIN
Drain Current-Max (Abs) (ID)
20A
Drain Current-Max (ID)
20mA
Drain-source On Resistance-Max
20mR
DS Breakdown Voltage-Min
20V
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-252AA
JESD-30 Code
R-PSSO-G2
JESD-609 Code
e3
Max Operating Temperature
150°C
Number of Elements
1
Package Body Material
Plastic
Package Shape
Rectangular
Package Style
SMALL OUTLINEMeter
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
36W
Qualification Status
Not Qualified
Reach SVHC Compliant
Yes
RoHS Compliant
Yes
Surface Mount
Yes
Terminal Finish
Tin
Terminal Form
Gull Wing
Terminal Position
SINGLE
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Compliance
RoHS
Compliant
Datasheet
Renesas 2SJ687-ZK-E1-AY Datasheet
Download the complete datasheet for Renesas 2SJ687-ZK-E1-AY to view detailed technical specifications.
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