
P-channel single power MOSFET featuring METAL-OXIDE SEMICONDUCTOR FET technology. Maximum drain current (ID) is 20A with a minimum DS breakdown voltage of 20V. Offers a maximum drain-source on-resistance of 20mΩ. Designed for switching applications, this component is housed in a TO-252AA (R-PSSO-G2) small outline surface mount package with gull wing terminals. Maximum power dissipation is 36W, and it operates up to 150°C. RoHS and REACH SVHC compliant with tin terminal finish.
Renesas 2SJ687-ZK-E1-AY technical specifications.
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