P-channel single power MOSFET featuring METAL-OXIDE SEMICONDUCTOR FET technology. Maximum drain current (ID) is 20A with a minimum DS breakdown voltage of 20V. Offers a maximum drain-source on-resistance of 20mΩ. Designed for switching applications, this component is housed in a TO-252AA (R-PSSO-G2) small outline surface mount package with gull wing terminals. Maximum power dissipation is 36W, and it operates up to 150°C. RoHS and REACH SVHC compliant with tin terminal finish.
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Renesas 2SJ687-ZK-E1-AY technical specifications.
| Case Connection | DRAIN |
| Drain Current-Max (Abs) (ID) | 20A |
| Drain Current-Max (ID) | 20mA |
| Drain-source On Resistance-Max | 20mR |
| DS Breakdown Voltage-Min | 20V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 Code | TO-252AA |
| JESD-30 Code | R-PSSO-G2 |
| JESD-609 Code | e3 |
| Max Operating Temperature | 150°C |
| Number of Elements | 1 |
| Package Body Material | Plastic |
| Package Shape | Rectangular |
| Package Style | SMALL OUTLINEMeter |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 36W |
| Qualification Status | Not Qualified |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Surface Mount | Yes |
| Terminal Finish | Tin |
| Terminal Form | Gull Wing |
| Terminal Position | SINGLE |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| RoHS | Compliant |
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