2SK1317-E

Datasheet

N-Ch MOSFET 1.5kV 2.5A 12R TO-3P Switching

Renesas

2SK1317-E

Name: 2SK1317-E Renesas
Brand: Renesas
SKU: 2SK1317-E

N-Ch MOSFET 1.5kV 2.5A 12R TO-3P Switching

N-channel single power MOSFET featuring a 1.5kV drain-source breakdown voltage and a maximum continuous drain current of 2.5A. This device offers a low drain-source on-resistance of 12 ohms and a maximum power dissipation of 100W. Designed for switching applications, it utilizes silicon transistor element material and a metal-oxide semiconductor FET technology. The component is housed in a TO-3P package with through-hole mounting and a plastic package body. It is RoHS compliant and lead-free, operating up to a maximum temperature of 150°C.

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Technical Specifications

Renesas 2SK1317-E technical specifications.

General

Case Connection	DRAIN
Drain Current-Max (Abs) (ID)	2.5A
Drain Current-Max (ID)	2.5A
Drain to Source Resistance	12R
Drain-source On Resistance-Max	12R
DS Breakdown Voltage-Min	1.5kV
FET Technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 Code	R-PSFM-T3
JESD-609 Code	e6
Lead Free	Lead Free
Max Operating Temperature	150°C
Moisture Sensitivity Level	1
Number of Elements	1
Package Body Material	Plastic
Package Shape	Rectangular
Package Style	FLANGE MOUNTMeter
Polarity/Channel Type	N-CHANNEL
Power Dissipation-Max (Abs)	100W
Pulsed Drain Current-Max (IDM)	7A
Qualification Status	Not Qualified
RoHS Compliant	Yes
Surface Mount	No
Terminal Finish	Tin
Terminal Form	Through Hole
Terminal Position	SINGLE
Transistor Application	SWITCHING
Transistor Element Material	SILICON