N-channel enhancement mode silicon power MOSFET in a TO-3P through-hole package. Features a maximum drain-source voltage of 1500V, continuous drain current of 4A, and a maximum power dissipation of 125W. This single-element transistor offers a typical input capacitance of 1700pF at 10V and a maximum drain-source on-resistance of 7000mΩ at 15V. Operating temperature range is -55°C to 150°C.
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| Basic Package Type | Through Hole |
| Package Family Name | TO-3P |
| Package/Case | TO-3P |
| Package Description | Transistor Outline Package |
| Lead Shape | Through Hole |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 15.6 |
| Package Width (mm) | 4.8 |
| Package Height (mm) | 18.9 |
| Pin Pitch (mm) | 5.45 |
| Package Material | Plastic |
| Mounting | Through Hole |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 1500V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 4A |
| Material | Si |
| Maximum Drain Source Resistance | 7000@15VmOhm |
| Typical Input Capacitance @ Vds | 1700@10VpF |
| Maximum Power Dissipation | 125000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| Cage Code | SAN34 |
| EU RoHS | Yes |
| HTS Code | 8541290095 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
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