N-channel single power MOSFET featuring a 100V drain-source breakdown voltage and a maximum continuous drain current of 30A, with a pulsed drain current capability of 60A. This component offers a low drain-source on-resistance of 58mΩ and a maximum power dissipation of 56W. Designed for switching applications, it utilizes silicon FET technology and is housed in a TO-220AB package with through-hole mounting. The MOSFET is RoHS compliant and REACH SVHC compliant, with an avalanche energy rating of 68mJ and a maximum operating temperature of 150°C.
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Technical Specifications
Renesas 2SK3481-AZ technical specifications.
General
| Avalanche Energy Rating (Eas) | 68mJ |
| Case Connection | DRAIN |
| Drain Current-Max (Abs) (ID) | 30A |
| Drain Current-Max (ID) | 30A |
| Drain-source On Resistance-Max | 58mR |
| DS Breakdown Voltage-Min | 100V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 Code | TO-220AB |
| JESD-30 Code | R-PSFM-T3 |
| Max Operating Temperature | 150°C |
| Number of Elements | 1 |
| Package Body Material | Plastic |
| Package Shape | Rectangular |
| Package Style | FLANGE MOUNTMeter |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 56W |
| Pulsed Drain Current-Max (IDM) | 60A |
| Qualification Status | Not Qualified |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Surface Mount | No |
| Terminal Form | Through Hole |
| Terminal Position | SINGLE |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
Compliance
| RoHS | Compliant |
Datasheet
Renesas 2SK3481-AZ Datasheet
Download the complete datasheet for Renesas 2SK3481-AZ to view detailed technical specifications.
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