N-channel Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET) designed for switching applications. Features a maximum drain current of 30A and a maximum drain-source on resistance of 21mR. Boasts a minimum drain-source breakdown voltage of 25V and a maximum power dissipation of 21W. Packaged in a TO-252AA small outline surface-mount rectangular plastic case with gull-wing terminals. Operates up to a maximum temperature of 150°C and is RoHS compliant.
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Technical Specifications
Renesas 2SK4069-ZK-E1-AY technical specifications.
General
| Case Connection | DRAIN |
| Drain Current-Max (Abs) (ID) | 30A |
| Drain Current-Max (ID) | 30A |
| Drain-source On Resistance-Max | 21mR |
| DS Breakdown Voltage-Min | 25V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 Code | TO-252AA |
| JESD-30 Code | R-PSSO-G2 |
| JESD-609 Code | e3 |
| Max Operating Temperature | 150°C |
| Number of Elements | 1 |
| Package Body Material | Plastic |
| Package Shape | Rectangular |
| Package Style | SMALL OUTLINEMeter |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 21W |
| Qualification Status | Not Qualified |
| RoHS Compliant | Yes |
| Surface Mount | Yes |
| Terminal Finish | Tin |
| Terminal Form | Gull Wing |
| Terminal Position | SINGLE |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
Compliance
| RoHS | Compliant |
Datasheet
Renesas 2SK4069-ZK-E1-AY Datasheet
Download the complete datasheet for Renesas 2SK4069-ZK-E1-AY to view detailed technical specifications.
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