N-channel Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET) designed for switching applications. Features a maximum drain current of 30A and a maximum drain-source on resistance of 21mR. Boasts a minimum drain-source breakdown voltage of 25V and a maximum power dissipation of 21W. Packaged in a TO-252AA small outline surface-mount rectangular plastic case with gull-wing terminals. Operates up to a maximum temperature of 150°C and is RoHS compliant.
Renesas 2SK4069-ZK-E1-AY technical specifications.
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