N-channel enhancement mode power MOSFET featuring 60V drain-source voltage and 3A continuous drain current. This single element silicon transistor is housed in a 3-pin DPAK(L) through-hole package with a tab, offering 20W maximum power dissipation. Key electrical characteristics include a maximum drain-source on-resistance of 180mΩ at 10V and typical input capacitance of 400pF at 10V. Operating temperature range spans from -55°C to 150°C.
PackageDPAK(L)
MountingThrough Hole
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Technical Specifications
Renesas 2SK974L technical specifications.
General
| Basic Package Type | Through Hole |
| Package Family Name | DPAK |
| Package/Case | DPAK(L) |
| Package Description | Deca Watt Package |
| Lead Shape | Through Hole |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Material | Plastic |
| Mounting | Through Hole |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 60V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 3A |
| Material | Si |
| Maximum Drain Source Resistance | 180@10VmOhm |
| Typical Input Capacitance @ Vds | 400@10VpF |
| Maximum Power Dissipation | 20000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | SAN34 |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
Datasheet
Renesas 2SK974L Datasheet
Download the complete datasheet for Renesas 2SK974L to view detailed technical specifications.
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