N-channel enhancement mode silicon power MOSFET designed for surface mounting. Features a 60V drain-source voltage, 3A continuous drain current, and 180mΩ maximum drain-source resistance at 10V. Housed in a TO-252 (DPAK) package with gull-wing leads, measuring 6.5mm x 5.5mm x 2.3mm, and rated for 20W maximum power dissipation. Operates across a temperature range of -55°C to 150°C.
PackageDPAK(S)
MountingSurface Mount
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Technical Specifications
Renesas 2SK974S technical specifications.
General
| Basic Package Type | Lead-Frame SMT |
| Package Family Name | TO-252 |
| Package/Case | DPAK(S) |
| Package Description | Deca Watt Package |
| Lead Shape | Gull-wing |
| Pin Count | 3 |
| PCB | 2 |
| Tab | Tab |
| Package Length (mm) | 6.5 |
| Package Width (mm) | 5.5 |
| Package Height (mm) | 2.3 |
| Seated Plane Height (mm) | 2.75(Max) |
| Pin Pitch (mm) | 2.29 |
| Package Weight (g) | 0.28 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Jedec | TO-252AB |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 60V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 3A |
| Material | Si |
| Maximum Drain Source Resistance | 180@10VmOhm |
| Typical Input Capacitance @ Vds | 400@10VpF |
| Maximum Power Dissipation | 20000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | SAN34 |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
Datasheet
Renesas 2SK974S Datasheet
Download the complete datasheet for Renesas 2SK974S to view detailed technical specifications.
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