This is a single NPN bipolar junction transistor with a maximum collector-emitter voltage of 50V and a minimum DC current gain of 80. It can handle a maximum collector current of 100mA and operates within a temperature range of -55°C to 150°C. The transistor is packaged in a small outline R-PDSO-G3 package, which is made of plastic and has a rectangular shape. It is suitable for switching applications and is manufactured by Renesas.
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| Collector-emitter Voltage-Max | 50V |
| DC Current Gain-Min (hFE) | 80 |
| JESD-30 Code | R-PDSO-G3 |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Number of Elements | 1 |
| Package Body Material | Plastic |
| Package Shape | Rectangular |
| Package Style | SMALL OUTLINEMeter |
| Polarity/Channel Type | NPN |
| Qualification Status | Not Qualified |
| Reach SVHC Compliant | Yes |
| Surface Mount | Yes |
| Terminal Form | Gull Wing |
| Terminal Position | DUAL |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Turn-off Time-Max (toff) | 6000ns |
| Turn-on Time-Max (ton) | 200ns |
| RoHS | Not Compliant |
