This is a single N-channel metal-oxide semiconductor field-effect transistor with a maximum drain current of 10A and a maximum drain-source on-resistance of 940mR. It has a minimum breakdown voltage of 600V and is packaged in a TO-220AB style with a plastic body and a flange mount style. The transistor is not qualified and is not suitable for surface mount applications, with a through-hole terminal form and a single terminal position.
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| Case Connection | Isolated |
| Drain Current-Max (ID) | 10A |
| Drain-source On Resistance-Max | 940mR |
| DS Breakdown Voltage-Min | 600V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 Code | TO-220AB |
| JESD-30 Code | R-PSFM-T3 |
| Number of Elements | 1 |
| Package Body Material | Plastic |
| Package Shape | Rectangular |
| Package Style | FLANGE MOUNTMeter |
| Polarity/Channel Type | N-CHANNEL |
| Pulsed Drain Current-Max (IDM) | 30A |
| Qualification Status | Not Qualified |
| Surface Mount | No |
| Terminal Form | Through Hole |
| Terminal Position | SINGLE |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| RoHS | Not Compliant |
