The FS30AS-2-T13 is a single N-channel metal-oxide semiconductor field-effect transistor (MOSFET) with a minimum breakdown voltage of 100V and a maximum drain current of 30A. It features a maximum drain-source on resistance of 100mR and a maximum pulsed drain current of 120A. The device is packaged in a small outline rectangular shape with a plastic body and a gull wing terminal form. It is qualified to meet the requirements of the JESD-30 code and is compliant with Reach SVHC regulations.
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Renesas FS30AS-2-T13 technical specifications.
| Case Connection | DRAIN |
| Drain Current-Max (ID) | 30A |
| Drain-source On Resistance-Max | 100mR |
| DS Breakdown Voltage-Min | 100V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 Code | R-PSSO-G2 |
| Number of Elements | 1 |
| Package Body Material | Plastic |
| Package Shape | Rectangular |
| Package Style | SMALL OUTLINEMeter |
| Polarity/Channel Type | N-CHANNEL |
| Pulsed Drain Current-Max (IDM) | 120A |
| Qualification Status | Not Qualified |
| Reach SVHC Compliant | Yes |
| Surface Mount | Yes |
| Terminal Form | Gull Wing |
| Terminal Position | SINGLE |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| RoHS | Not Compliant |
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