Quick Jump:
Technical Specifications
Renesas FS5ASJ-3 technical specifications.
General
Case Connection
DRAIN
Drain Current-Max (ID)
5A
Drain-source On Resistance-Max
370mR
DS Breakdown Voltage-Min
150V
FET Technology
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Package Body Material
Plastic
Package Shape
Rectangular
Package Style
SMALL OUTLINEMeter
Polarity/Channel Type
N-CHANNEL
Pulsed Drain Current-Max (IDM)
20A
Qualification Status
Not Qualified
Surface Mount
Yes
Terminal Form
Gull Wing
Terminal Position
SINGLE
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Compliance
RoHS
Not Compliant
Datasheet
Renesas FS5ASJ-3 Datasheet
Download the complete datasheet for Renesas FS5ASJ-3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.