The FS70KMJ-06F is a single N-channel metal-oxide semiconductor FET with a maximum operating temperature of 150°C. It features a maximum drain current of 70A and a maximum power dissipation of 30W. The device is packaged in a TO-220AB style with a plastic body and a flange mount. It is suitable for switching applications and has a minimum breakdown voltage of 60V.
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Renesas FS70KMJ-06F technical specifications.
| Case Connection | Isolated |
| Drain Current-Max (Abs) (ID) | 70A |
| Drain Current-Max (ID) | 70A |
| Drain-source On Resistance-Max | 8.3mR |
| DS Breakdown Voltage-Min | 60V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 Code | TO-220AB |
| JESD-30 Code | R-PSFM-T3 |
| Max Operating Temperature | 150°C |
| Number of Elements | 1 |
| Package Body Material | Plastic |
| Package Shape | Rectangular |
| Package Style | FLANGE MOUNTMeter |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 30W |
| Pulsed Drain Current-Max (IDM) | 280A |
| Qualification Status | Not Qualified |
| Surface Mount | No |
| Terminal Form | Through Hole |
| Terminal Position | SINGLE |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| RoHS | Not Compliant |
Download the complete datasheet for Renesas FS70KMJ-06F to view detailed technical specifications.
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