This N-channel power MOSFET is designed for high-speed switching in motor control, lamp control, solenoid control, and DC-DC converter applications. It is rated for 60 V drain-source voltage, 70 A continuous drain current, 280 A pulsed drain current, and 125 W maximum power dissipation at Tc = 25°C. The device specifies a maximum drain-source on-resistance of 7.5 mΩ at VGS = 10 V and includes an integrated fast-recovery diode with 85 ns typical reverse recovery time. Operating junction and storage temperatures range from -55°C to +150°C, and the package is TO-220S.
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| Number of Terminals | 2 |
| Terminal Position | SINGLE |
| Pin Count | 3 |
| Number of Elements | 1 |
| Eccn Code | EAR99 |
| REACH | Compliant |
| Military Spec | False |
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