The GA1A4M-T1-A is a single NPN bipolar junction transistor with a minimum current gain of 35 and a maximum collector current of 100mA. It has a maximum power dissipation of 150mW and is manufactured with SILICON material. The transistor is surface mountable and compliant with RoHS and Reach SVHC regulations.
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| DC Current Gain-Min (hFE) | 35 |
| Max Collector Current | 100mA |
| Number of Elements | 1 |
| Polarity/Channel Type | NPN |
| Power Dissipation-Max (Abs) | 150mW |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Surface Mount | Yes |
| Transistor Element Material | SILICON |
| RoHS | Compliant |
