N-channel single power MOSFET featuring a 200V drain-source breakdown voltage and a maximum continuous drain current of 96A. This device offers a low on-resistance of 23mΩ, enabling efficient switching applications. With a maximum absolute power dissipation of 150W and a pulsed drain current capability of 192A, it is designed for robust performance. The MOSFET utilizes silicon as its element material and comes in a TO-3P package with through-hole mounting and copper terminal finish.
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Technical Specifications
Renesas H5N2008P-E technical specifications.
General
| Case Connection | DRAIN |
| Drain Current-Max (Abs) (ID) | 96A |
| Drain Current-Max (ID) | 96A |
| Drain-source On Resistance-Max | 23mR |
| DS Breakdown Voltage-Min | 200V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 Code | R-PSFM-T3 |
| JESD-609 Code | e2 |
| Max Operating Temperature | 150°C |
| Moisture Sensitivity Level | 1 |
| Number of Elements | 1 |
| Package Body Material | Plastic |
| Package Shape | Rectangular |
| Package Style | FLANGE MOUNTMeter |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 150W |
| Pulsed Drain Current-Max (IDM) | 192A |
| Qualification Status | Not Qualified |
| RoHS Compliant | Yes |
| Surface Mount | No |
| Terminal Finish | Copper |
| Terminal Form | Through Hole |
| Terminal Position | SINGLE |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
Compliance
| RoHS | Compliant |
Datasheet
Renesas H5N2008P-E Datasheet
Download the complete datasheet for Renesas H5N2008P-E to view detailed technical specifications.
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