Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Renesas H5N2509P datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
| Case Connection | DRAIN |
| Drain Current-Max (ID) | 30A |
| Drain-source On Resistance-Max | 69mR |
| DS Breakdown Voltage-Min | 250V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 Code | R-PSFM-T3 |
| JESD-609 Code | e0 |
| Number of Elements | 1 |
| Package Body Material | Plastic |
| Package Shape | Rectangular |
| Package Style | FLANGE MOUNTMeter |
| Polarity/Channel Type | N-CHANNEL |
| Pulsed Drain Current-Max (IDM) | 120A |
| Qualification Status | Not Qualified |
| RoHS Compliant | No |
| Surface Mount | No |
| Terminal Finish | Tin |
| Terminal Form | Through Hole |
| Terminal Position | SINGLE |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| RoHS | Not Compliant |
Download the complete datasheet for Renesas H5N2509P to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
