N-channel power MOSFET featuring a 300V drain-source breakdown voltage and a maximum continuous drain current of 40A. This device offers a low drain-source on-resistance of 69mΩ, enabling efficient switching applications. With a maximum power dissipation of 150W and a pulsed drain current capability of 160A, it is designed for demanding power handling. The TO-3P package with a flange mount style and single terminal position facilitates robust thermal management.
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Technical Specifications
Renesas H5N3003P technical specifications.
General
| Case Connection | DRAIN |
| Drain Current-Max (Abs) (ID) | 40A |
| Drain Current-Max (ID) | 40A |
| Drain-source On Resistance-Max | 69mR |
| DS Breakdown Voltage-Min | 300V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 Code | R-PSFM-T3 |
| JESD-609 Code | e0 |
| Max Operating Temperature | 150°C |
| Number of Elements | 1 |
| Package Body Material | Plastic |
| Package Shape | Rectangular |
| Package Style | FLANGE MOUNTMeter |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 150W |
| Pulsed Drain Current-Max (IDM) | 160A |
| Qualification Status | Not Qualified |
| RoHS Compliant | No |
| Surface Mount | No |
| Terminal Finish | Tin |
| Terminal Form | Through Hole |
| Terminal Position | SINGLE |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
Compliance
| RoHS | Not Compliant |
Datasheet
Renesas H5N3003P Datasheet
Download the complete datasheet for Renesas H5N3003P to view detailed technical specifications.
No datasheet is available for this part.