N-channel single power MOSFET featuring 300V drain-source breakdown voltage and 88A continuous drain current. This component offers a maximum on-resistance of 48mΩ and supports a pulsed drain current of 176A. Designed for switching applications, it utilizes metal-oxide semiconductor FET technology on a silicon element. The device is housed in a TO-3P package with through-hole mounting and a plastic body, rated for a maximum operating temperature of 150°C.
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Technical Specifications
Renesas H5N3011P-E technical specifications.
General
| Case Connection | DRAIN |
| Drain Current-Max (Abs) (ID) | 88A |
| Drain Current-Max (ID) | 88A |
| Drain-source On Resistance-Max | 48mR |
| DS Breakdown Voltage-Min | 300V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 Code | R-PSFM-T3 |
| JESD-609 Code | e2 |
| Max Operating Temperature | 150°C |
| Moisture Sensitivity Level | 1 |
| Number of Elements | 1 |
| Package Body Material | Plastic |
| Package Shape | Rectangular |
| Package Style | FLANGE MOUNTMeter |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 150W |
| Pulsed Drain Current-Max (IDM) | 176A |
| Qualification Status | Not Qualified |
| RoHS Compliant | Yes |
| Surface Mount | No |
| Terminal Finish | Copper |
| Terminal Form | Through Hole |
| Terminal Position | SINGLE |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
Compliance
| RoHS | Compliant |
Datasheet
Renesas H5N3011P-E Datasheet
Download the complete datasheet for Renesas H5N3011P-E to view detailed technical specifications.
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