N-channel power MOSFET with a 30V drain-source breakdown voltage and a maximum continuous drain current of 60A. Features a low 8.5mΩ drain-source on-resistance and a maximum power dissipation of 30W. This silicon MOSFET utilizes metal-oxide semiconductor FET technology, offering a pulsed drain current of up to 240A. Packaged in a TO-220AB (TO-220CFM) configuration with isolated case connection and through-hole terminals, it is suitable for switching applications and operates up to 150°C. RoHS compliant and moisture sensitive level 1.
Renesas H7N0308CF-E technical specifications.
| Case Connection | Isolated |
| Drain Current-Max (Abs) (ID) | 60A |
| Drain Current-Max (ID) | 60A |
| Drain-source On Resistance-Max | 8.5mR |
| DS Breakdown Voltage-Min | 30V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 Code | TO-220AB |
| JESD-30 Code | R-PSFM-T3 |
| JESD-609 Code | e2 |
| Max Operating Temperature | 150°C |
| Moisture Sensitivity Level | 1 |
| Number of Elements | 1 |
| Package Body Material | Plastic |
| Package Shape | Rectangular |
| Package Style | FLANGE MOUNTMeter |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 30W |
| Pulsed Drain Current-Max (IDM) | 240A |
| Qualification Status | Not Qualified |
| RoHS Compliant | Yes |
| Surface Mount | No |
| Terminal Finish | Copper |
| Terminal Form | Through Hole |
| Terminal Position | SINGLE |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| RoHS | Compliant |
No datasheet is available for this part.
