P-channel Power MOSFET with 60V drain-source breakdown voltage and 15A continuous drain current. Features 130mΩ maximum drain-source on-resistance and 50W maximum absolute power dissipation. Designed for switching applications, this surface-mount component utilizes silicon FET technology and is housed in a rectangular, plastic SC-83 (LDPAK-3) package with gull-wing terminals. Maximum operating temperature is 150°C, with a peak reflow temperature of 240°C.
Quick Jump:
Technical Specifications
Renesas HAF1002-90STL technical specifications.
General
Case Connection
DRAIN
Drain Current-Max (Abs) (ID)
15A
Drain Current-Max (ID)
15A
Drain-source On Resistance-Max
130mR
DS Breakdown Voltage-Min
60V
FET Technology
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PSSO-G2
JESD-609 Code
e0
Max Operating Temperature
150°C
Number of Elements
1
Package Body Material
Plastic
Package Shape
Rectangular
Package Style
SMALL OUTLINEMeter
Peak Reflow Temperature (Cel)
240°C
Polarity/Channel Type
P-CHANNEL
Power Dissipation-Max (Abs)
50W
Pulsed Drain Current-Max (IDM)
30A
Qualification Status
Not Qualified
RoHS Compliant
No
Surface Mount
Yes
Terminal Finish
Tin
Terminal Form
Gull Wing
Terminal Position
SINGLE
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Compliance
RoHS
Not Compliant
Datasheet
Renesas HAF1002-90STL Datasheet
Download the complete datasheet for Renesas HAF1002-90STL to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.