P-channel Power MOSFET with 60V drain-source breakdown voltage and 15A continuous drain current. Features 130mΩ maximum drain-source on-resistance and 50W maximum absolute power dissipation. Designed for switching applications, this surface-mount component utilizes silicon FET technology and is housed in a rectangular, plastic SC-83 (LDPAK-3) package with gull-wing terminals. Maximum operating temperature is 150°C, with a peak reflow temperature of 240°C.
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Renesas HAF1002-90STL technical specifications.
| Case Connection | DRAIN |
| Drain Current-Max (Abs) (ID) | 15A |
| Drain Current-Max (ID) | 15A |
| Drain-source On Resistance-Max | 130mR |
| DS Breakdown Voltage-Min | 60V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 Code | R-PSSO-G2 |
| JESD-609 Code | e0 |
| Max Operating Temperature | 150°C |
| Number of Elements | 1 |
| Package Body Material | Plastic |
| Package Shape | Rectangular |
| Package Style | SMALL OUTLINEMeter |
| Peak Reflow Temperature (Cel) | 240°C |
| Polarity/Channel Type | P-CHANNEL |
| Power Dissipation-Max (Abs) | 50W |
| Pulsed Drain Current-Max (IDM) | 30A |
| Qualification Status | Not Qualified |
| RoHS Compliant | No |
| Surface Mount | Yes |
| Terminal Finish | Tin |
| Terminal Form | Gull Wing |
| Terminal Position | SINGLE |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| RoHS | Not Compliant |
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