P-channel Power MOSFET with 60V drain-source breakdown voltage and 15A continuous drain current. Features 130mΩ maximum drain-source on-resistance and 50W maximum absolute power dissipation. Designed for switching applications, this surface-mount component utilizes silicon FET technology and is housed in a rectangular, plastic SC-83 (LDPAK-3) package with gull-wing terminals. Maximum operating temperature is 150°C, with a peak reflow temperature of 240°C.
Renesas HAF1002-90STL technical specifications.
Download the complete datasheet for Renesas HAF1002-90STL to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.