The HAF1002-90STL-E is a P-channel metal-oxide semiconductor field-effect transistor (MOSFET) with a maximum drain current of 15A and a minimum breakdown voltage of 60V. It features a maximum drain-source on resistance of 130 milliohms. The device is packaged in a small outline R-PSSO-G2 package, which is made of plastic and has a rectangular shape. The HAF1002-90STL-E is suitable for switching applications and is compliant with the Restriction of Hazardous Substances (RoHS) directive.
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Renesas HAF1002-90STL-E technical specifications.
| Case Connection | DRAIN |
| Drain Current-Max (ID) | 15A |
| Drain-source On Resistance-Max | 130mR |
| DS Breakdown Voltage-Min | 60V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 Code | R-PSSO-G2 |
| Number of Elements | 1 |
| Package Body Material | Plastic |
| Package Shape | Rectangular |
| Package Style | SMALL OUTLINEMeter |
| Polarity/Channel Type | P-CHANNEL |
| Pulsed Drain Current-Max (IDM) | 30A |
| Reach SVHC Compliant | Yes |
| Surface Mount | Yes |
| Terminal Form | Gull Wing |
| Terminal Position | SINGLE |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| RoHS | Not Compliant |
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