The HAT1025R is a P-channel metal-oxide semiconductor field-effect transistor (MOSFET) with a maximum drain current of 4.5A and a maximum drain-source on-resistance of 150 milliohms. It has a minimum breakdown voltage of 20V and is packaged in a small outline (SO-8) plastic package with a rectangular shape. The device is suitable for switching applications and has a silicon transistor element material. It is a dual-element device and is qualified for surface mount technology with gull wing terminals. The operating temperature range is not specified.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Renesas HAT1025R datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Renesas HAT1025R technical specifications.
| Drain Current-Max (ID) | 4.5A |
| Drain-source On Resistance-Max | 150mR |
| DS Breakdown Voltage-Min | 20V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 Code | MS-012AA |
| JESD-30 Code | R-PDSO-G8 |
| Number of Elements | 2 |
| Package Body Material | Plastic |
| Package Shape | Rectangular |
| Package Style | SMALL OUTLINEMeter |
| Polarity/Channel Type | P-CHANNEL |
| Pulsed Drain Current-Max (IDM) | 36A |
| Qualification Status | Not Qualified |
| Surface Mount | Yes |
| Terminal Form | Gull Wing |
| Terminal Position | DUAL |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| RoHS | Not Compliant |
Download the complete datasheet for Renesas HAT1025R to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
