The HAT1036R is a P-channel metal-oxide semiconductor field-effect transistor with a maximum drain current of 12A and a maximum drain-source on-resistance of 34 milliohms. It has a minimum breakdown voltage of 30V and is packaged in a rectangular small outline package. The transistor is suitable for switching applications and is constructed with a silicon element. The HAT1036R is not qualified and is not RoHS compliant.
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Technical Specifications
Renesas HAT1036R technical specifications.
General
| Drain Current-Max (ID) | 12A |
| Drain-source On Resistance-Max | 34mR |
| DS Breakdown Voltage-Min | 30V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 Code | MS-012AA |
| JESD-30 Code | R-PDSO-G8 |
| JESD-609 Code | e0 |
| Number of Elements | 1 |
| Package Body Material | Plastic |
| Package Shape | Rectangular |
| Package Style | SMALL OUTLINEMeter |
| Polarity/Channel Type | P-CHANNEL |
| Pulsed Drain Current-Max (IDM) | 96A |
| Qualification Status | Not Qualified |
| RoHS Compliant | No |
| Surface Mount | Yes |
| Terminal Finish | Tin |
| Terminal Form | Gull Wing |
| Terminal Position | DUAL |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
Compliance
| RoHS | Not Compliant |
Datasheet
Renesas HAT1036R Datasheet
Download the complete datasheet for Renesas HAT1036R to view detailed technical specifications.
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