The HAT1044M is a P-channel metal-oxide semiconductor field-effect transistor (MOSFET) with a maximum drain current of 4.5A and a maximum drain-source on resistance of 105 milliohms. It has a minimum breakdown voltage of 30V and is packaged in a small outline R-PDSO-G6 package. The transistor is suitable for switching applications and is made from silicon. It is a single-element device and is surface mountable with a gull wing terminal form and dual terminal position.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Renesas HAT1044M datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Renesas HAT1044M technical specifications.
| Drain Current-Max (ID) | 4.5A |
| Drain-source On Resistance-Max | 105mR |
| DS Breakdown Voltage-Min | 30V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 Code | R-PDSO-G6 |
| Number of Elements | 1 |
| Package Body Material | Plastic |
| Package Shape | Rectangular |
| Package Style | SMALL OUTLINEMeter |
| Polarity/Channel Type | P-CHANNEL |
| Pulsed Drain Current-Max (IDM) | 18A |
| Qualification Status | Not Qualified |
| Surface Mount | Yes |
| Terminal Form | Gull Wing |
| Terminal Position | DUAL |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| RoHS | Not Compliant |
Download the complete datasheet for Renesas HAT1044M to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
