Dual P-channel MOSFET for switching applications, featuring a -20V drain-source breakdown voltage and a maximum continuous drain current of 6A. Offers a low drain-source on-resistance of 50mΩ. This surface-mount component utilizes METAL-OXIDE SEMICONDUCTOR FET technology on a SILICON element, housed in a rectangular, plastic SMALL OUTLINE package (SOP8) with gull wing terminals. Maximum power dissipation is 3W, with a peak reflow temperature tolerance of 260°C for 20 seconds.
Quick Jump:
Technical Specifications
Renesas HAT1054R-EL-E technical specifications.
General
| Drain Current-Max (Abs) (ID) | 6A |
| Drain Current-Max (ID) | 6A |
| Drain-source On Resistance-Max | 50mR |
| DS Breakdown Voltage-Min | 20V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 Code | R-PDSO-G8 |
| JESD-609 Code | e6 |
| Max Operating Temperature | 150°C |
| Moisture Sensitivity Level | 1 |
| Number of Elements | 2 |
| Package Body Material | Plastic |
| Package Shape | Rectangular |
| Package Style | SMALL OUTLINEMeter |
| Peak Reflow Temperature (Cel) | 260°C |
| Polarity/Channel Type | P-CHANNEL |
| Power Dissipation-Max (Abs) | 3W |
| Pulsed Drain Current-Max (IDM) | 48A |
| Qualification Status | Not Qualified |
| RoHS Compliant | Yes |
| Surface Mount | Yes |
| Terminal Finish | Tin |
| Terminal Form | Gull Wing |
| Terminal Position | DUAL |
| Time @ Peak Reflow Temperature-Max (s) | 20s |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
Compliance
| RoHS | Compliant |
Datasheet
Renesas HAT1054R-EL-E Datasheet
Download the complete datasheet for Renesas HAT1054R-EL-E to view detailed technical specifications.
No datasheet is available for this part.