
P-channel single power MOSFET featuring a maximum drain-source breakdown voltage of 30V and continuous drain current of 40A. Offers a low on-resistance of 7.7mΩ maximum, ideal for switching applications. This surface-mount component utilizes silicon FET technology within a rectangular LFPAK package, rated for a maximum operating temperature of 150°C and a peak reflow temperature of 260°C for 20 seconds. It is RoHS compliant with tin terminal finish and a moisture sensitivity level of 1.
Sign in to ask questions about the Renesas HAT1072H-EL-E datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Renesas HAT1072H-EL-E technical specifications.
| Case Connection | DRAIN |
| Drain Current-Max (Abs) (ID) | 40A |
| Drain Current-Max (ID) | 40A |
| Drain-source On Resistance-Max | 7.7mR |
| DS Breakdown Voltage-Min | 30V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-609 Code | e6 |
| Max Operating Temperature | 150°C |
| Moisture Sensitivity Level | 1 |
| Number of Elements | 1 |
| Package Body Material | Plastic |
| Package Shape | Rectangular |
| Package Style | SMALL OUTLINEMeter |
| Peak Reflow Temperature (Cel) | 260°C |
| Polarity/Channel Type | P-CHANNEL |
| Power Dissipation-Max (Abs) | 30W |
| Pulsed Drain Current-Max (IDM) | 160A |
| Qualification Status | Not Qualified |
| RoHS Compliant | Yes |
| Surface Mount | Yes |
| Terminal Finish | Tin |
| Terminal Form | Gull Wing |
| Terminal Position | SINGLE |
| Time @ Peak Reflow Temperature-Max (s) | 20s |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| RoHS | Compliant |
Download the complete datasheet for Renesas HAT1072H-EL-E to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
