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Technical Specifications
Renesas HAT1111C-EL-E technical specifications.
General
Drain Current-Max (Abs) (ID)
2A
Drain Current-Max (ID)
2A
Drain-source On Resistance-Max
450mR
DS Breakdown Voltage-Min
60V
FET Technology
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PDSO-F6
JESD-609 Code
e6
Max Operating Temperature
150°C
Number of Elements
1
Package Body Material
Plastic
Package Shape
Rectangular
Package Style
SMALL OUTLINEMeter
Polarity/Channel Type
P-CHANNEL
Power Dissipation-Max (Abs)
1.25W
Pulsed Drain Current-Max (IDM)
8A
Qualification Status
Not Qualified
RoHS Compliant
Yes
Surface Mount
Yes
Terminal Finish
Tin
Terminal Form
Flat
Terminal Position
DUAL
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Compliance
RoHS
Compliant
Datasheet
Renesas HAT1111C-EL-E Datasheet
Download the complete datasheet for Renesas HAT1111C-EL-E to view detailed technical specifications.
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