P-channel single power MOSFET featuring a 30V drain-source breakdown voltage and a maximum continuous drain current of 40A. Offers a low drain-source on-resistance of 7.7mΩ at a 10V gate-source voltage. Designed for switching applications, this surface-mount component utilizes METAL-OXIDE SEMICONDUCTOR FET technology and is housed in a rectangular, small outline LFPAK package with gull wing terminals. Maximum power dissipation is 30W, with a peak reflow temperature of 260°C for 20 seconds.
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Technical Specifications
Renesas HAT1127H-EL-E technical specifications.
General
| Case Connection | DRAIN |
| Drain Current-Max (Abs) (ID) | 40A |
| Drain Current-Max (ID) | 40A |
| Drain-source On Resistance-Max | 7.7mR |
| DS Breakdown Voltage-Min | 30V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-609 Code | e6 |
| Max Operating Temperature | 150°C |
| Moisture Sensitivity Level | 1 |
| Number of Elements | 1 |
| Package Body Material | Plastic |
| Package Shape | Rectangular |
| Package Style | SMALL OUTLINEMeter |
| Peak Reflow Temperature (Cel) | 260°C |
| Polarity/Channel Type | P-CHANNEL |
| Power Dissipation-Max (Abs) | 30W |
| Pulsed Drain Current-Max (IDM) | 160A |
| Qualification Status | Not Qualified |
| RoHS Compliant | Yes |
| Surface Mount | Yes |
| Terminal Finish | Tin |
| Terminal Form | Gull Wing |
| Terminal Position | SINGLE |
| Time @ Peak Reflow Temperature-Max (s) | 20s |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
Compliance
| RoHS | Compliant |
Datasheet
Renesas HAT1127H-EL-E Datasheet
Download the complete datasheet for Renesas HAT1127H-EL-E to view detailed technical specifications.
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