N-channel MOSFET transistor for switching applications, featuring a 30V drain-source breakdown voltage and a maximum continuous drain current of 11A. This component offers a low 25mΩ maximum drain-source on-resistance. Encased in an 8-pin small outline package (SOP) with gull-wing terminals, it supports surface mounting and operates up to 150°C. The device is RoHS compliant and designed for a peak reflow temperature of 260°C for 20 seconds.
Renesas HAT2022R-EL-E technical specifications.
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