The HAT2036R is a single N-channel metal-oxide semiconductor field-effect transistor with a maximum drain current of 12A and a maximum drain-source on-resistance of 30mR. It has a minimum breakdown voltage of 30V and is packaged in a rectangular small outline package. The device is suitable for switching applications and is constructed with a silicon transistor element. It is available in a surface mount package with gull wing terminals in a dual terminal position.
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Renesas HAT2036R technical specifications.
| Drain Current-Max (ID) | 12A |
| Drain-source On Resistance-Max | 30mR |
| DS Breakdown Voltage-Min | 30V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 Code | MS-012AA |
| JESD-30 Code | R-PDSO-G8 |
| Number of Elements | 1 |
| Package Body Material | Plastic |
| Package Shape | Rectangular |
| Package Style | SMALL OUTLINEMeter |
| Polarity/Channel Type | N-CHANNEL |
| Pulsed Drain Current-Max (IDM) | 96A |
| Qualification Status | Not Qualified |
| Surface Mount | Yes |
| Terminal Form | Gull Wing |
| Terminal Position | DUAL |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| RoHS | Not Compliant |
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