N-channel single power MOSFET featuring METAL-OXIDE SEMICONDUCTOR FET technology. Delivers a maximum drain current of 2A with a minimum drain-source breakdown voltage of 200V. Offers a maximum drain-source on-resistance of 440mR, suitable for switching applications. Packaged in an 8-pin SOP (R-PDSO-G8) with gull-wing terminals for surface mounting. Rated for a maximum operating temperature of 150°C and is RoHS compliant.
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Technical Specifications
Renesas HAT2088R-EL-E technical specifications.
General
Drain Current-Max (Abs) (ID)
2A
Drain Current-Max (ID)
2A
Drain-source On Resistance-Max
440mR
DS Breakdown Voltage-Min
200V
FET Technology
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PDSO-G8
JESD-609 Code
e6
Max Operating Temperature
150°C
Moisture Sensitivity Level
1
Number of Elements
1
Package Body Material
Plastic
Package Shape
Rectangular
Package Style
SMALL OUTLINEMeter
Peak Reflow Temperature (Cel)
260°C
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
2.5W
Qualification Status
Not Qualified
RoHS Compliant
Yes
Surface Mount
Yes
Terminal Finish
Tin
Terminal Form
Gull Wing
Terminal Position
DUAL
Time @ Peak Reflow Temperature-Max (s)
20s
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Compliance
RoHS
Compliant
Datasheet
Renesas HAT2088R-EL-E Datasheet
Download the complete datasheet for Renesas HAT2088R-EL-E to view detailed technical specifications.
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