N-Channel Dual Power MOSFET featuring 30V drain-source breakdown voltage and a maximum continuous drain current of 11A. This surface-mount device offers a low drain-source on-resistance of 25mΩ, ideal for switching applications. It utilizes METAL-OXIDE SEMICONDUCTOR FET technology and is housed in a rectangular, plastic SMALL OUTLINE package with gull wing terminals. With a maximum power dissipation of 3W and a peak reflow temperature of 260°C for 20 seconds, this RoHS compliant component is designed for efficient operation.
Renesas HAT2092R-EL-E technical specifications.
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