N-channel single power MOSFET featuring 30V drain-source breakdown voltage and a maximum continuous drain current of 40A. Offers a low 5.3mΩ maximum on-resistance and a pulsed drain current capability of 160A. Designed for switching applications with a maximum power dissipation of 20W and a maximum operating temperature of 150°C. This surface-mount component utilizes a rectangular LFPAK package with gull-wing terminals and is RoHS compliant.
Renesas HAT2096H-EL-E technical specifications.
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